FJG RAM

FJG RAM, short for Floating Junction Gate Random Access Memory, is a type of computer memory invented by Oriental Semiconductor Electronics, Ltd.[1]

The FJG RAM has an ultra-compact cell area of 4F2 (F refers to feature size) and a capacitorless cell configuration. It is made without exotic process steps, materials or new process tools, and the process for making the device is available from all existing DRAM fabs. Due to the absence of a capacitor, the FJG cell process is more compatible with logic processes, allowing its use not only in standalone DRAM applications but also in embedded-DRAM applications. Other properties include non-destructive-read and the possibility for DRAM designers to use shared sense-amplifiers to reduce the complexity of peripheral circuits.[2]

As of April 2016, there was little evidence of ongoing development or near-term commercialization efforts.

FJG diagrams
FJG diagrams

References

  1. "Emerging Memory Technologies | VLSI Tutorials | Mepits". www.mepits.com. Archived from the original on 2016-06-03. Retrieved 2023-03-31.
  2. Wang, Pang-Fei. "Capacitorless Dram Cell With Floating Junction Gate". www.growthconsulting.frost.com. Archived from the original on 2015-08-15. Retrieved 2023-03-31.
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